日本金属学会誌

J. Japan Inst. Metals, Vol. 63, No. 1 (1999),
pp. 55-61

Synthesis of Diamond by Thermal Plasma Processing under Low Pressure

Satoshi Sakiyama and Osamu Fukumasa

Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University, Ube 755-8611

Abstract:

To realize the large area deposition of diamond films at a high rate, synthesis of diamond with the use of plasma jets under medium pressure, which are in the transition region from thermal plasmas to cold plasmas, is studied. Under low pressure, the morphology of deposited particles strongly depends on the ratio of methane gas flow rate to hydrogen gas flow rate, CH4/H2, and on the distance from the feed ring exit to the substrate, L. The euhedral diamond particles are synthesized when CH4/H2 is lower and L is shorter. To clarify the relationship between the morphology of the prepared particles and the chemical species in the plasma jet, emission spectra from the plasma jet have been studied. The spectra of the Balmer series of hydrogen, hydrocarbons and dicarbon have attracted special interest. Among these spectra, the spectral intensity ratio of CH to Hα at 1 mm above the substrate has a strong correlation with the quality of synthesized diamond and its deposition area.}


(Received August 3, 1998; In Final From November 30, 1998)

Keywords:

diamond synthesis, plasma jet, thermal plasma, chemical vapor deposition, spectroscopic measurement, plasma processing, medium pressure


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