Materials Transactions Online

Materials Transactions, Vol.57 No.10 (2016) pp.1685-1690
© 2016 The Japan Institute of Metals and Materials

Effect of Trace Ge on Wettability and High-Temperature Oxidation Resistance of Sn-0.7Cu Lead-Free Solder

Qing-meng Wang1, Gui-sheng Gan1, 2, Yunfei Du3, Donghua Yang1, Guoqi Meng1, Huaishan Wang1 and Yi-ping Wu2

1Chongqing Municipal Engineering Research Center of Institutions of Higher Education for Special Welding Materials and Technology (Chongqing University of technology), Chongqing 400054, China
2College of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
3School of Foreign Languages and Cultures, Chongqing University of Technology, Chongqing 400054, China

Sn-0.7Cu and Sn-0.7Cu-xGe solder alloys were prepared to investigate the influence of trace Ge on liquid Sn-0.7Cu lead-free solder at high temperature. The spreadability and the wetting force of solders were tested, and the oxidation-resistance was also evaluated by eye observation and skimming at 250℃~370℃. The results have shown that trace Ge can improve the spreading rate of Sn-0.7Cu, but have a few effect on the wettability. The oxide slag quantity of Sn-0.7Cu was three times more than the Sn-0.7Cu-0.012Ge at the same temperature and period, the optimal content of Ge to improve the oxidation resistance of Sn-0.7Cu was 0.012 mass%. The growth factor of oxide film on the surface of liquid Sn-0.7Cu solder (k250℃ = 1.59 × 10−6, k370℃ = 3.03 × 10−6) were both twice higher than the Sn-0.7Cu-0.012Ge (k250℃ = 0.56 × 10−6, k370℃ = 1.04 × 10−6) at 250℃ and 370℃ respectively.


(Received 2016/03/21; Accepted 2016/07/20; Published 2016/09/25)

Keywords: lead-free solder, Sn-0.7Cu, oxidation-resistance, wettability

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  1. G.S. Gan, C.H. Du, H.B. Xu, B. Yang, Z.K. Li, M. Tang and M.M. Cao: Rare Met. Mater. Eng. 42 (2013) 2416-2420 (In Chinese).
  2. J.H.L. Pang, B.S. Xiong and T.H. Low: Int. J. Fatigue 26 (2004) 865-872.
  3. G. Zeng, S.B. Xue, L. Zhang and L.L. Gao: J. Mater. Sci. Mater. Electron. 22 (2011) 565-578.
  4. G.D. Li, Y.W. Shi, G.C. Xu, Z.D. Xia and Y.P. Lei: Electron. Compon. Mater. 26 (2008) 50-53 (In Chinese).
  5. G.D. Li, Y.W. Shi, H. Hao, Z.D. Xia, Y.P. Lei and F. Guo: J. Alloy. Compd. 491 (2011) 382-385.
  6. G. Zeng, S.B. Xue, L.L. Gao, L. Zhang, Y.H. Hu and Z.M. Lai: J. Alloy. Compd. 509 (2010) 7152-7161.
  7. L. Yang, Y.C. Zhang, J. Dai, Y.F. Jing, J. G. Ge and N. Zhang: Mater. Des. 67 (2015) 209-216.
  8. I. Shohji, R. Arai. Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium (2012):1-5.
  9. I. Shohji, H. Watanabe, T. Okashita and T. Osawa: Mater. Trans. 49 (2008) 1513-1517.
  10. B. Lu, H.W. Zhu and H. Huang: Hot Working Technology 38 (2009) 7-9 (In Chinese).
  11. G.L. Gong and A.P. Xian: Acta Metall. Sin. 43 (2007) 759-763 (In Chinese).
  12. A. Sharma, H.R. Sohn and J.P. Jung: Metall. Mater. Trans., A 47 (2016) 494-503.
  13. F. Chen, C.H. Du, Y.F. Du, W.S. Wang and G.S. Gan: Electron. Compon. Mater. 25 (2006) 49-51 (In Chinese).
  14. G.S. Gan, C.H. Du, F. Chen and W.S. Wang: Journal of chongqing institute of technology 20 (2006) 60-62. (In Chinese)
  15. S.Q. Wu, L.W. Shao, J.M. Liu and W.B. Jiang: Journal of Southeast University 19 (1989) 74-79 (In Chinese).


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