Materials Transactions Online

Materials Transactions, JIM, Vol.40 No.3 (1999) pp.209-213
© 1999 The Japan Institute of Metals

Effect of Oxygen Gas Addition on Preparation of Iridium and Platinum Films by Metal-Organic Chemical Vapor Deposition

Takashi Goto, J. Roberto Vargas and Toshio Hirai

Institute for Materials Research, Tohoku University,
2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.

(Received June 8, 1998; In Final Form November 12, 1998)

Keywords: metal-organic chemical vapor deposition, iridium film, platinum film, oxygen gas addition, epitaxial growth

Graduate Student, Tohoku University, Present address: ESIQIEIPN, AP. 75-874, Mexico.

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© 1999 The Japan Institute of Metals