Materials Transactions Online

Materials Transactions, JIM, Vol.33 No.9 (1992) pp.845-850
© 1992 The Japan Institute of Metals

Preparation and Thermoelectric Properties of Mg2Si1-xGex (x=0.0∼0.4) Solid Solution Semiconductors

Yasutoshi Noda*, Hiroyuki Kon*††, Yoshitaka Furukawa*, Nobuyuki Otsuka*†††,
Isao A. Nishida** and Katashi Masumoto***

*Department of Materials Science, Faculty of Engineering, Tohoku University, Sendai 980, Japan
**National Research Institute for Metals, Tokyo 153, Japan
***Department of Electronic Materials, Faculty of Science and Technology, Ishinomaki Senshu University,
Ishinomaki 986; Research Institute for Electric and Magnetic Materials, Sendai 982, Japan

Mg2Si1-xGex Solid Solution Semiconductors were prepared in the composition range 0.0 ≤ x ≤ 0.4. At a composition x=0.4, effects of impurities were investigated for dopants of Sb and Ag. Carrier concentrations were controlled up to 1.5×1026 electrons/m3 and 5.5×1025 holes/m3 by doping Sb and Ag, respectively. The thermal conductivity κ was measured at 300 K. By calculating the electronic thermal conductivity κel based on the Fermi integration, the lattice thermal conductivity κph was estimated to be 2.10 Wm-1 K-1. Figure-of-merits Z's of Mg2Si0.6Ge0.4 at 300 K were 0.69×10-3 K-1 for the n-type sample with an electron concentration of 5.4×1025 m-3 (3000 ppmSb) and 0.47×10-3 K-1 for the p-type one with a hole concentration of 5.2×1025 m-3 (16000 ppmAg).

(Received March 24, 1992)

Keywords: dimagnesium silicon germanide, semiconducting solid solution, dopants, thermoelectricity, figure-of-merit, Fermi integral

This paper was originally published in Japanese in J. Japan Inst. Metals, 53 (1989), 487 and 55 (1991), 893.

†† Graduate Student, Tohoku University. Present address: Mitsui Mining and Smelting Co., Ltd., Ageo 362, Japan.

††† Graduate Student, Tohoku University. Present address: Central Research Laboratory, Matsushita Electric Industrial Co., Ltd., Moriguchi 570, Japan.

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© 1992 The Japan Institute of Metals