Materials Transactions Online

Materials Transactions, JIM, Vol.31 No.7 (1990) pp.622-627
© 1990 The Japan Institute of Metals

Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor

N. Otsuka*, D. Li*, J. Qiu**,
M. Kobayashi** and R. L. Gunshor**

A series of pseudomorphic (100) ZnSe/GaAs heterostructures were grown by molecular beam epitaxy on GaAs epilayers which had different As coverages of surfaces. A large variation of the interface state density was observed among the heterostructures by capacitance-voltage measurements. Transmission electron microscope observations of cross-sectional samples have revealed existence of an interface layer in the heterostructures grown on As-deficient GaAs surfaces. Analyses of dark field images and high resolution microscope images have shown that the interface layer has a structure similar to that of Ga2Se3 which crystallizes in a zincblende type structure with vacancies on the Ga sublattice.

(Received April 10, 1990)

Keywords: ZnSe/GaAs heterostructure, molecular beam epitaxy, cross-sectional transmission electron microscopy, interface layer, Ga2Se3


* School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA.

** School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907, USA.

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© 1990 The Japan Institute of Metals