日本金属学会誌

J. Japan Inst. Metals, Vol. 76, No. 9 (2012),
pp. 541-545

Thermoelectric Properties of Full-Heusler Type Fe2VAl Thin Films

Akinori Nishide, Yousuke Kurosaki, Hiroyuki Yamamoto, Shin Yabuuchi, Masakuni Okamoto and Jun Hayakawa

Central Research Laboratory, Hitachi, Ltd., Tokyo 185-8601

Abstract:

We investigated thermoelectric properties of full-Heusler type Fe2VAl thin films. In order to achieve high Seebeck coefficient (S) and low resistivity (ρ) with low thermal conductivity (κ), we fabricated Fe2VAl thin films with a MgO seed layer and annealed them at 800°C. The MgO seed layer and the annealing process transform the Fe2VAl thin films into L21-ordered Heusler structure. The films show S of 59.5 μV/K and ρ of 3.14 μ Ω m together with κ of 4.43 W/m·K, which results in the ZT of as high as 0.079. The considerably small κ compared to the one of bulk samples may originate from an enhancement of the phonon scattering due to a reduction of the film thickness.


(Received 2012/4/2)

Keywords:

thermoelectric properties, pseudogap, Heusler alloys, electrical resistivity, Seebeck coefficient, thermal conductivity


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