Akinori Nishide, Yousuke Kurosaki, Hiroyuki Yamamoto, Shin Yabuuchi, Masakuni Okamoto and Jun Hayakawa
Central Research Laboratory, Hitachi, Ltd., Tokyo 185-8601
We investigated thermoelectric properties of full-Heusler type Fe2VAl thin films. In order to achieve high Seebeck coefficient (S) and low resistivity (ρ) with low thermal conductivity (κ), we fabricated Fe2VAl thin films with a MgO seed layer and annealed them at 800°C. The MgO seed layer and the annealing process transform the Fe2VAl thin films into L21-ordered Heusler structure. The films show S of 59.5 μV/K and ρ of 3.14 μ Ω m together with κ of 4.43 W/m·K, which results in the ZT of as high as 0.079. The considerably small κ compared to the one of bulk samples may originate from an enhancement of the phonon scattering due to a reduction of the film thickness.
thermoelectric properties, pseudogap, Heusler alloys, electrical resistivity, Seebeck coefficient, thermal conductivity
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