日本金属学会誌

J. Japan Inst. Metals, Vol. 73, No. 9 (2009),
pp. 670-673

Magnetoresistance Effect of Magnetic Tunnel Junction with Co2Ti0.5Mn0.5Al Full-Heusler Alloy Thin Film

Akihiro Sasaki1, Nobuki Tezuka1, Satoshi Sugimoto1, Akinari Okubo1, Rie Umetsu2 and Ryosuke Kainuma2

1Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai 980-8579
2Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577

Abstract:

We investigated the magnetoresistance effect for a magnetic tunnel junction(MTJ) using a Co2Ti0.5Mn0.5Al electrode on a Cr buffered MgO(001) single crystal substrate. The Co2Ti0.5Mn0.5Al formed an ordered L21 and B2 structures after post-annealing above 873 K and below 773 K, respectively. Maximum magnetization and minimum coercivity were exhibited in Co2Ti0.5Mn0.5Al annealed at 673 K. The MTJ using a Co2Ti0.5Mn0.5Al electrode with B2 structure exhibited tunnel magnetoresistance(TMR) ratio of 37% at room temperature and 60% at 5 K. The TMR ratio was larger than that of MTJ using a Co2Ti0.5Mn0.5Al electrode with L21 structure in this study.


(Received 2009/4/21)

Keywords:

tunnel magnetoresistance effect, full-Heusler alloy, ferromagnetic tunnel junction


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