日本金属学会誌

J. Japan Inst. Metals, Vol. 67, No. 10 (2003),
pp. 538-546

Interfacial Microstructure of SiC/Cu Joint Friction-Bonded with Ti Intermediate Layer

Akio Nishimoto1, Masaaki Ando2, Makoto Takahashi3, Masatoshi Aritoshi4, Katsuya Akamatsu1 and Kenji Ikeuchi3

1Department of Materials Science and Engineering, Faculty of Engineering, Kansai University, Suita 564-8680
2Akita National College of Technology, Akita 011-0923

3Joining and Welding Research Institute, Osaka University, Ibaraki 567-0047

4Hyogo Prefectural Institute of Industrial Research, Kobe 654-0037

Abstract:

In order to discuss the effect of a Ti intermediate layer on the strength of the friction-bonded joint of silicon carbide to copper, the microstructure of the joint interface was observed with a TEM. Specimens to be bonded were rods of pressureless-sintered SiC and oxygen-free copper. TEM observations revealed that reaction layers less than a few 10 nm thick were formed, which were identified as Cu, TiC, and Ti5Si3 on the basis of SAD pattern and EDX analyses. The Ti5Si3 layer was partly formed as discrete islands on the Cu side of the TiC layer. The Cu layer was located between SiC matrix and TiC layer, forming TiC/Cu double layers. The TiC/Cu double layers presented preferred orientation \beginalign*}
& (1012)6H-SiC//(111)TiC, [1210]6H-SiC//[110]TiC

& (1012)6H-SiC//(111)Cu, [1210]6H-SiC//[110]Cu
\end{align*}

On the other hand, the Ti5Si3 layer showed no preferred orientation relationship with SiC or Cu. In addition to these reaction layers, amorphous layers of Si oxide {~} 100 nm thick were occasionally observed at the SiC/Cu interface. In the Cu-Ti mixing region adjacent to the joint interface, Cu4Ti particles {~ 100 nm size in diameter were observed.


(Received May 12, 2003)

Keywords:

silicon carbide, copper, titanium, reactive metal, friction bonding, reaction layer, titanium carbide, interfacial microstructure, transmission electron microscopy, lattice misfit}


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