Naomi Matsumura and Tsuneaki Hayashi
4th Research Group, Research Institute for Metal Surface of High Performance, Ltd., Minato-ku, Tokyo 105
Fabrication of crystalline Al2O3 films by the method consisting of ion beam sputtering of the Al target in an oxygen atmosphere and a simultaneous oxygen ion-irradiation toward the specimen surface was carried out.
At 573 K, the simultaneous oxygen ion-irradiation under 120 kV-0.077 A/m2 conditions formed γ-Al2O3 crystal films, whereas amorphous Al2O3 was produced without oxygen ion-irradiation. At 1073 K, the γ-Al2O3 crystal was produced without oxygen ion-irradiation. On the other hand, ion-irradiation under 150 kV--0.103 A/m2 conditions created the (α+θ)-Al2O3 crystal.
The γ-Al2O3 and (α+θ)-Al2O3 crystals were produced at low temperatures as compared with the conventional procedures such as PVD and CVD. Therefore the enhancement of crystallization of Al2O3 film by oxygen ion-irradiation was clarified.
Wear resistance tests using the ball-on-disk method showed that disks coated with crystallized Al2O3 films had higher resistance than the amorphous Al2O3-coated and non-coated disks with increasing hardness number.
(Received September 30, 1996)
Al2O3 film, amorphous, crystallization, ion beam sputtering, ion beam irradiation, X-ray diffraction, rutherford backscattering spectrometry, transmission electron microscopy, wear resistance
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