J. Japan Inst. Metals, Vol. 60, No. 12 (1996),
pp. 1192-1199

Time-Dependent Charging by X-ray Irradiation of Ultrathin SiO₂ Films on Si

Seiichi Iwata¹, Yuzuru Ohji² and Akitoshi Ishizaka¹

Abstract:

In the study of X-ray-induced surface potential changes of ultrathin SiO₂ films on Si caused by X-ray irradiation, we investigated why the time constant for the X-ray-irradiation time dependence decreases with increasing oxide thickness and saturates at about 10 nm thickness. We conclude that the above changes are caused by the hole trapping at traps close to the SiO₂/Si interface and that the time constant is greater at small thicknesses because the hole concentration is effectively smaller at thicknesses close to the hole mean free path, which could be estimated to be about 1.8 nm.

(Received May 17, 1996)

Keywords:

ultrathin silicon oxide films, X-ray irradiation, charging, surface potential changes, dry oxide films, X-ray-irradiation time, time constant, hole traps, silicon oxide/silicon interfaces, oxide thickness, hole mean free path

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