日本金属学会誌

J. Japan Inst. Metals, Vol. 60, No. 8 (1996),
pp. 751-756

Thermal Decomposition of Tetraethoxysilane Studied byAtmospheric Mass-Spectrometer

Keita Sirakami1, Kenji Kobayashi2,Hiroshi Kikuchi3 and Akio Fuwa

Department of Materials Science and Engineering, School of Science and Engineering, Waseda University, Tokyo

Abstract:

Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed:
(1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows:

\begin{equation*


(Received November 27, 1995)

Keywords:

tetraethoxysilane, thermal decomposition, kinetics mass spectrometer


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