日本金属学会誌

J. Japan Inst. Metals, Vol. 60, No. 8 (1996),
pp. 744-750

Texture of Thin Silicon Films Deposited from Si2Cl6

Y. Kato1, N. Saito2 and Akio Fuwa

Department of Materials Science and Engineering, School of Science and Engineering, Waseda University, Tokyo

Abstract:

Thin Silicon films were deposited on non-crystal quartz glass substrates by hydrogen reduction of Si2Cl6 at temperatures from 650 to 900°C in a horizontal hot wall reactor. The microstructures of the thin silicon films deposited under various experimental conditions were analyzed. The thin silicon films deposited from 750 to 850°C have the highest degree of preferred (220) plane orientation with the <{111}> direction along the plane, and the cross-sectional morphology exhibits a columnar structure. The experimental values of the lattice spacing approach a value cited in JCPDS for the films deposited in a higher temperature range. In the lower temperature range the morphology of surface is flat and smooth, and in the higher temperature range the surface becomes uneven remarkably.


(Received July 17, 1995)

Keywords:

crystal orientation, silicon, thinfilms, chemical vapor deposition, crystal morphology


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