日本金属学会誌

J. Japan Inst. Metals, Vol. 59, No. 9 (1995),
pp. 978-983

Reaction Mechanism between SiC Ceramic and Ti Foil in Solid State Bonding

Jicai Feng1, Masaaki Naka1 and J. C. Schuster2

1Welding Research Institute, Osaka University, Ibaraki
2Institute of Physical Chemistry, University of Vienna, Vienna, Austria

Abstract:

The solid state bonding of pressureless-sintered (PLS) SiC to SiC using Ti-foils (50 μm, 20 μm and 8 μm) were conducted at the bonding temperatures ranging from 1373 to 1673 K for 0.3 to 144 ks in vacuum. The total diffusion path, formation process of reaction phases and the reaction mechanism were examined. At a bonding temperature of 1673 K for 0.3 ks, granular TiC next to Ti and a mixture of Ti5Si3Cx+TiC phases next to SiC were formed. Further, the Ti5Si3Cx single phase appeared between SiC and the mixture of Ti5Si3Cx+TiC at the bonding time of 0.9 ks. Upon the formation of Ti3SiC2 (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: SiC/Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx+TiC/TiC/Ti. At a longer bonding time, TiC and Ti5Si3Cx were consumed and only the Ti3SiC2 and TiSi2 phases were detected in the reaction zone.


(Received March 14, 1995)

Keywords:

ceramics/metal joining, solid bonding, diffusion path, reaction mechanism, interface structure, silicon carbide, titanium carbide, titanium silicide


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