日本金属学会誌

J. Japan Inst. Metals, Vol. 55, No. 11 (1991),
pp. 1249-1255

Evaluation of Residual Stress and Optical Transmittance for Amorphous B-N-C Films Prepared by Low Pressure Chemical Vapor Deposition

Masahiko Sakakihara1 and Yukio Ichinose2

1Magnetic & Electronic Materials Research Laboratory, Hitachi Metals Ltd., Kumagaya. Present address: Graduate Student, Nagaoka University of Technology, Nagaoka
2Nagaoka University of Technology, Nagaoka

Abstract:

Characteristics of films used for X-ray mask membrane demand the tensile stress against Si substrate and the high optical transmittance over 70 or 80% at the 630 nm wave length of He-Ne laser using for the alignment between mask and wafer. It was difficult to obtain an amorphous BN (a-BN) film satisfied those requirements. We investigated the effect of addition of carbon to a-BN films and, as the result, obtained the conditions to produce a-BNC films suitable for mask membrane.
It was found that there were some optimum combinations of the deposition temperature and the gas flow ratio (CH3NH2/B2H6) . For example, with the gas flow ratios of 10 at 973 K, 0.53-1.6 at 1023 K and 0.53 at 1073 K, the films having the tensile stress of about 2× 108 Pa and the optical transmittance of 70 or 80% were obtained.
Moreovere, the thermal stress and the thermal expansion coefficient αf of the films were calculated from the stress vs temperature curves of the substrates with films. The αf is proportional to the Boron (B) contents as follows: αf=1.38× 10-7×B-5.6× 10-6 (B : mol%).


(Received 1991/7/6)

Keywords:

amorphous boron nitride film, mask membrane, residual stress, optical transmittance, thermal stress, intrinsic stress, thermal expansion coefficient, low pressure chemical vapor deposition


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