日本金属学会誌

J. Japan Inst. Metals, Vol. 55, No. 8 (1991),
pp. 907-908

High Resolution Electron Microscopy of Al/Si and Al/Si3N4 Interfaces Prepared by Room Temperature Bonding Method

Hideki Takagi1, Yutaka Takahashi2, Tadatomo Suga3 and Yoshio Bando4

1Graduate Student, University of Tokyo, Tokyo
2Department of Precision Engineering, Faculty of Engineering, University of Tokyo, Tokyo
3Research Center for Advanced Science and Technology, University of Tokyo, Tokyo
4National Institute for Research in Inorganic Materials, Ibaraki

Abstract:

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(Received )

Keywords:

surface activation method, aluminium/silicon, aluminium/silicon nitride, aluminiun/aluminium, argon beam bombardment, surface damage, high resolution electron microscopy


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