日本金属学会誌

J. Japan Inst. Metals, Vol. 55, No. 8 (1991),
pp. 893-897

Thermoelectric Properties of Mg2Si0.6Ge0.4

Hiroyuki Kon1, Yasutoshi Noda2, Yoshitaka Furukawa2, Isao Nishida3 and Katashi Masumoto4

1Graduate Student, Tohoku University, Sendai. Present address: Mitsui Mining & Smelting Co., Ltd., Ageo
2Department of Materials Science, Faculty of Engineering, Tohoku University, Sendai
3National Research Institute for Metals, Tokyo
4Department of Electronic Materials, Faculty of Science and Technology, Ishinomaki Senshu University, Ishinomaki; Research Institute for Electric and Magnetic Materials, Sendai

Abstract:

Mg2Si0.6Ge0.4 solid solution semiconductor was prepared by direct melting, where the reaction between samples and graphite crucible was suppressed using NaCl flux. Carrier concentrations were controlled in the regions of 6.5× 1024~1.5× 1026 electrons/m3 and 1.0× 1024~5.5× 1025 holes/m3 by doping Sb and Ag, respectively. Thermal conductivity k was measured at 300 K for Sb-doped samples. By calculating the electronic thermal conductivity kel based on the Fermi integrailon, the lattice thermal conductivity kph was estimated to be 2.10 Wm-1K-1. Figure-of-merits Z, of Mg2Si0.6Ge0.4 at 300 K were 0.69× 10-3 K-1 for the n-type sample with an electron concentration of 5.4× 1025 m-3 (3000 ppm Sb) and 0.47× 10-3 K-1 for p-type one with a hole concentration of 5.2× 1025 m-3 (16000 ppm Ag).


(Received 1991/3/26)

Keywords:

dimagnesium silicon germanide, semiconducting solid solution, doping, thermoelectricity, figure-of-merit, Fermi integral


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