Hiroyuki Kon1, Yasutoshi Noda2, Yoshitaka Furukawa2, Isao Nishida3 and Katashi Masumoto4
1Graduate Student, Tohoku University, Sendai. Present address: Mitsui Mining & Smelting Co., Ltd., Ageo
Mg2Si0.6Ge0.4 solid solution semiconductor was prepared by direct melting, where the reaction between samples and graphite crucible was suppressed using NaCl flux. Carrier concentrations were controlled in the regions of 6.5× 1024~1.5× 1026 electrons/m3 and 1.0× 1024~5.5× 1025 holes/m3 by doping Sb and Ag, respectively. Thermal conductivity k was measured at 300 K for Sb-doped samples. By calculating the electronic thermal conductivity kel based on the Fermi integrailon, the lattice thermal conductivity kph was estimated to be 2.10 Wm-1K-1. Figure-of-merits Z, of Mg2Si0.6Ge0.4 at 300 K were 0.69× 10-3 K-1 for the n-type sample with an electron concentration of 5.4× 1025 m-3 (3000 ppm Sb) and 0.47× 10-3 K-1 for p-type one with a hole concentration of 5.2× 1025 m-3 (16000 ppm Ag).
dimagnesium silicon germanide, semiconducting solid solution, doping, thermoelectricity, figure-of-merit, Fermi integral
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