Noboru Yoshikawa1, Haruhiko Aikawa2 and Atsushi Kikuchi1
1Department of Metallurgy, Faculty of Engineering, Tohoku University, Sendai. Present address: Sumitomo Denko Co. Ltd., Yokohama
Reactant gas mixtures (TiCl4, H2, N2) were introduced to the tublar reactor and TiN films were deposited on the inner wall of the reactor at different conditions (temperature, total gas flow rete, TiCl4 concentration).
X-ray diffractometry and SEM observations were carried out to characterize the microstructures of the films. It was found that morphologies consisting of tiny needle-like and planar crystals appeared in the upstream regions, while the morphologies consisting of coarsened polyhedral grains with (110) orientation appeared in the downstream region.
The variation of the deposition temperature mainly influenced the grain size of the films. The total gas flow rate was responsible for the positions at which these morphologies appeared, and the higher TiCl4 concentration gave rise to finner structures and less dominant (110) orientation.
The relationships between the film morphologies and their crystal orientation were studied by TEM observations.
(Received 1990/12/21)
TiN, chemical vapour deposition, microstructure, crystal orientation, coating
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