日本金属学会誌

J. Japan Inst. Metals, Vol. 54, No. 12 (1990),
pp. 1297-1301

Microstructure of Bulk-Type Multiple Stacking Faults in Silicon Crystals

Shigeru Aoki1

1Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo

Abstract:

Silicon specimens containing stacking faults (SFs) are cut out of Czochralski-grown wafers for observation with a transmission electron microscope (TEM). <100>-oriented silicon wafers normally used for large scale integrated circuit devices are subjected to thermal treatments in N2 and O2 ambients in order to form bulk-type SFs. Then, TEM specimens are carefully prepared for observing the whole image of the SF in the fault plane. For this purpose the specimen is cut off along the 111 plane being inclined from the (100) wafer surface by 55 degrees. It is found that a bulk-type multiple stacking fault consists of a cluster of SiO2 precipitates located in the center of a circular Frank dislocation loop, and of many SiO2 precipitates on the loop.


(Received 1990/6/21)

Keywords:

silicon crystal, extrinsic stacking fault, transmission electron microscopy, Frank dislocation loop, SiO2 precipitate


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