日本金属学会誌

J. Japan Inst. Metals, Vol. 52, No. 3 (1988),
pp. 279-287

Mechanism of Formation of SiC by Reaction of SiO with Graphite and CO

Toshio Shimoo1, Fusago Mizutaki2, Shigeru Ando1 and Hiroshi Kimura1

1Department of Metallurgical Engineering, College of Engineering, University of Osaka Prefecture, Sakai
2Graduate Student, University of Osaka Prefecture, Sakai

Abstract:

The rates of the reactions of the gaseous species SiO and CO with solid carbon have been studied by means of thermogravimetry at temperatures between 1673 and 1973 K, in order to investigate the mechanism of the formation of SiC in SiO2-C mixtures. The graphite substratum has been allowed to react with SiO and CO generated from the heated SiO2-C mixture.
At lower temperatures, the deposit of SiC is formed on the graphite substratum by the over-all reaction


(Received 1987/9/8)

Keywords:

formation of silicon carbide, gaseous SiO, graphite substratum, reaction kinetics, thermogravimetry, rate-determining step


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