日本金属学会誌

J. Japan Inst. Metals, Vol. 45, No. 7 (1981),
pp. 653-660

Miscibility Gap in Ti-V System

Osamu Nakano1, Hisaoki Sasano1, Toshiyuki Suzuki1 and Hirozo Kimura2

1National Research Institute for Metals, Tokyo
2National Research Institute for Metals, Tokyo. Present address: Department of Industrial Mechanical Engineering, Kogakuin University, Tokyo

Abstract:

In order to confirm the existence of the miscibility gap in Ti-V system electrical resistivity measurements and X-ray diffraction analysis were carried out for the alloys containing 5∼50 mass%V.
Temperature dependence of electrical resistivity suggests that monotectoid reaction of β → β12 occures at temperature above 948 K. A pair of diffraction lines observed in the X-ray diffraction pattern for the alloys containing 30, 40 and 50 mass%V after aging at temperatures between 973 and 1073 K for more than 7.2 Ms are considered to be direct evidence to prove the decomposition of β phase.
The present results indicate that a miscibility gap of β → β12 exists in the range above 948 K and at more than 20 mass%V. The results also indicate that the transformation of β → β + α occurs around 948 K.


(Received 1981/01/31)

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