日本金属学会誌

J. Japan Inst. Metals, Vol. 40, No. 11 (1976),
pp. 1134-1140

G.P.Zones in Al-Zn Alloys Containing a Small Amount of Additional Elements and Their Contribution to Transport Phenomena

Yutaka Hiraoka1, Kozo Osamura2 and Yotaro Murakami2

1Graduate School, Kyoto University, Kyoto. Present address: National Research Institute for Metals, Tokyo
2Department of Metallurgy, Faculty of Engineering, Kyoto University, Kyoto

Abstract:

In order to determine experimentally the scattering power of the G.P.zones in Al-Zn-Si, Al-Zn-Ag and Al-Zn-Mg alloys, in which the effect of a small amount of third elements Si, Ag and Mg on the formation and growth of G.P.zones is known to be different from each other, the changes in electrical resistivity and X-ray small-angle scattering during aging at 20°C have been measured. It is shown that the size dependence of the scattering power of a G.P.zone in each ternary alloy is explained in terms of the difference of the solute concentration in zones and the effect of the third elements in zones on the scattering power, especially for the Al-Zn-Ag and Al-Zn-Mg alloys.


(Received 1976/03/13)

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