日本金属学会誌

J. Japan Inst. Metals, Vol. 39, No. 4 (1975),
pp. 414-418

Recrystallization of Vacuum-Deposited Silver and Copper Films

Mitsuhiko Yoshida1, Saburo Nakamura1 and Hajime Suto2

1Miyagi Technical College, Natori
2Faculty of Engineering, Tohoku University, Sendai

Abstract:

The recrystallization of vacuum-deposited silver and copper films about 2 μ in thickness was investigated by means of transmission electron microscopy, electrical resistivity measurements, differential thermal analysis and X-ray diffraction techniques.
The results of observation were as follows:
In the as-deposited silver films, one of the preferential plane orientations parallel to the substrate was 111. A ratio of diffracted intensity (I200/I111) reached about 0.4 when held at room temperature; the ratio is expected to result from the random orientation. Recrystallization was observed in the temperature range from 30 to 50°C.
For copper, the recrystallization produced an almost complete reorientation such that 100 planes were parallel to the substrate.
From the measurement of heat released during recrystallization, the grain boundary energies for silver and copper were estimated to be 320 ± 60 erg/cm2 and 810 ± 170 erg/cm2, respectively.


(Received 1974/10/30)

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