日本金属学会誌

J. Japan Inst. Metals, Vol. 38, No. 10 (1974),
pp. 985-990

Mechanical and Electrical Properties of Vacuum Deposited Cu-SiO Alloy Films

Hajime Suto1 and Kazuhiro Kumasaka2

1Faculty of Engineering, Tohoku University, Sendai
2Graduate School, Tohoku University, Sendai. Present address: The Electrical Communication Laboratories, Nippon Telegraph and Telegram Public Cooporation, Mito

Abstract:

Cu-SiO alloy films were prepared by means of vapor deposition on glass substrates at room temperature. The films about 4 μ in thickness were used to test the mechanical properties, and the thin films about 4000 Å in thickness were used to observe the microstructure and for the measurement of electric resistivity. On these properties as a function of annealing temperature, the alloys behaved as a typical dispersion-strengthening alloy. The life to disconnection was also measured as a function of current density, and it was found that the life of alloy films was distinctly prolonged by pre-annealing at 400°C.


(Received 1974/06/5)

Keywords:


PDF(Free)PDF (Free)     Table of ContentsTable of Contents

Please do not copy without permission.