日本金属学会誌

J. Japan Inst. Metals, Vol. 38, No. 10 (1974),
pp. 913-919

Preparation of TiC Film by R.F. Reactive Sputtering

Katsumitsu Nakamura1, Fujitoshi Shinoki2 and Akio Itoh2

1Electrotechnical Laboratory, Tanashi. Present address: College of Humanities and Science, Nihon University, Tokyo
2Electrotechnical Laboratory, Tanashi

Abstract:

Titanium carbide films were prepared on glass substrates at 300°C by r.f. reactive sputtering in the atmosphere of argon-methane mixture.
The carbon to metal atmic ratio [C/Ti] of titanium carbide films were determined by an Electron Prove Microanalyzer (E.P.M.A.). The ratio [C/Ti] varied with changing methane partial pressure and r.f. sputtering voltage. The stoichiometric composition of titanium carbide was obtained at a methane partial pressure of 6×10-4 Torr using the r.f. sputtering voltage of 1.8 kV.
The structure of the films was studied by the electron transmission diffraction method. When the atomic ratio [C/Ti] was less than 0.06, the diffraction patterns showed the hcp structure containing carbon interstitials in the α -Ti lattice. The patterns of fcc structure of titanium carbide were observed above the level of C/Ti=0.25. The lattice parameter of the titanium carbide film corresponding to C/Ti=1.0 was a=4.30 Å.
The electrical resistivity and the temperature coefficient of resistance (T.C.R.) were measured as a function of the atomic ratio [C/Ti]. The resistivity and T.C.R. at the stoichiometric composition were 2×10-4 \varOmega-cm (at 30°C) and 50 ppm/deg (30∼120°C), respectively.


(Received 1974/03/23)

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