Toshio Kurosawa1 and Tetsuo Yagihashi1
1National Research Institute for Metals, Tokyo
Following on the previously described small-scale hydrogen reduction, a producing experiment has been carried out using a larger apparatus, graphite and quartz tubes for depostion part, and a source material of purified SiI4 etc. in order to examine problems to be accompanied in producing step. A surface of deposition tube was initially dotted with crystal nucleus of silicon, then these developed with successive nucleation and growth. Silicon was deposited in lump, needle and other forms. Particullarly, in order to use SiI4 more effectively, unreacted SiI4 was traped by cooling, and it was returned to the boiler and reacted repeatedly. Properties of single crystals obtained by Czochralski and floating zone methods were investigated.
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