日本金属学会誌

J. Japan Inst. Metals, Vol. 27, No. 5 (1963),
pp. 202-205

Resistivity Distribution at Cross Section in a Pulled Silicon Crystal

Masahisa Sammonji1

1Tokai Electrode Mfd. Co., Ltd., Chigasaki

Abstract:

To the analysis of resistivity distribution at cross section in a pulled Si crystal, the theory of effective distribution coefficient was applied.
The following are illustrations of present report.
(1) Solute concentration at cross section. (Experimental illustration.)
(2) Analysis of concentration distribution at cross section. (On the effective distribution coefficient.)
(3) Resistivity distribution at cross section of phosphorus doped Si crystals. (Experimental.)
(4) Diffusion layer in the melt-solid interface. (On the calculated value with phosphorus doped Si-crystals.)
(5) Resistivity distribution at cross section of boron doped Si-crystals. (Experimental.)
(6) Resistivity distribution at cross section of a boron and phosphorus doped Si-crystal. (With the combination of 3 and 5.)
(7) Discussion. (On the diffusion coefficients of impurities in molten Si.)
The results are in agreement with another impurity doped Si-crystal in an assumption of diffusion coefficient.


(Received 1963/1/17)

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