日本金属学会誌

J. Japan Inst. Metals, Vol. 16, No. 3 (1952),
pp. 143-147

Studies on Semiconductors (IV) On the Rectifying Characteristics of NiO and Cu2O

Tomo-o Satô, Hideo Kaneko and Katashi Masumoto


Abstract:

The rectifying characteristics of NiO were measured and the following results were obtained. The pressed type NiO rectifiers without artificial blocking layer have no rectifying action. NiO made by heating nickel plate at a high temperature, on the contrary, has rectifying action, and its rectifying direction is just opposite to that of Cu2O. Hence, it may be considered that the blocking layer of NiO is formed on its surface.
The voltage drop across the Cu2O rectifying plate was measured and it was found that the total rectification consisted of two actions, namely, the blocking layer rectification and the bulk rectification of Cu2O itself.
The effects of heat treatment of copper sheet upon the characteristic of Cu2O rectifying plate were also determined and a vacuum heating was found to be a successful pretreatment.


(Received 1951/10/27)

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