日本金属学会誌

J. Japan Inst. Metals, Vol. 14, No. 3 (1950),
pp. 36-39

Studies on Selenium and its Alloys (V) Some Experiments on the Mechanism of Rectifying Action of Selenium

Tomo-o Sato and Hideo Kaneko


Abstract:

The rectifying action of semiconductor takes place through a thin insulating layer (so-called blocking layer) at the contact surface of metal and semiconductor, but in the case of selenium rectifier the nature of this blocking layer has not been thoroughly disclose so far. Therefore the present authors carried out some experiments on this problem and obtained the following results.
A thin film of selenium dioxide which has formed by the heat treatment or oxidiizing treatment changes into selenious acid by absorbing moisture in atmosphere,and through the next course of electrical formation, the amorphous selenium deposits electrolytically from the selenious acid. This thin layer of amorphous selenium plays the role of blocking layer.
The rectifying characteristics of selenium with various kinds of artificial blocking layer such as sulphur,celluloid,enamel,varnish and alumina were also measured and some discussions on the mechanism of rectification were made from these data.


(Received 1949/7/30)

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