日本金属学会誌

J. Japan Inst. Metals, Vol. 14, No. 3 (1950),
pp. 33-36

Studies on Selenium and its Allys (IV) On the Effect of Additional Elements upon the Electrical Resistance of Se

Tomo-o Satô and Hideo Kaneko


Abstract:

The effect of additional elements,such as halogen elements,S,Te,Bi,Cd and Sn upon the electrical resistance of Se was studied and the following results were obtained.
(a) The electrical resistance of Se-halogen alloys decreases with the increase of halogen content. As the valency of Se and halogen is 2 and 1 respectivey,so one halogen atom added to Se produces one positive hole. Therefore, the positive hole conduction of Se increases with the content of additional halogen element up to a certain limit.
(b) The electrical resistance of Se-Te alloys increases with the content of Te. As each of Se and Te has the same valency, Te atom in the Se lattice produces neither free electron nor positive hole. Therefore the deviation of periodical potential induced by Te atom makes the electrical resistance increase.
(c) The selenides of Cd,Sn and Bi have smaller electrical resistance than that of pure Se,so that the layer produced between Se and cathode alloy on the Se-rectifing-plate can not act as the blocking one of rectification.


(Received 1949/7/30)

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