Materials Transactions Online

Materials Transactions, Vol.58 No.04 (2017) pp.688-691
© 2017 The Japan Institute of Metals and Materials

Pyrometallurgical Recovery of Gallium from GaN Semiconductor through Chlorination Process Utilizing Ammonium Chloride

Kazuki Nishinaka1, Osamu Terakado2, Haruki Tani1 and Masahiro Hirasawa1

1Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
2Department of Material and Environmental Engineering, National Institute of Technology, Hakodate College, Hakodate 042-8501, Japan

Pyrometallurgical chlorination process has been examined for the recovery of gallium from gallium nitride, GaN, a promising semiconductor material. It was found that gallium was successfully recovered as volatile gallium chloride by thermal treatment of GaN powder in the presence of ammonium chloride. All gallium could be recovered as volatile species at 500℃. The results indicate that gallium can be extracted from complex mixture of semiconductor materials or wastes through this process. The influence of reaction conditions, such as reaction temperature and composition of ammonium chloride, was examined.


(Received 2016/11/07; Accepted 2017/01/25; Published 2017/03/25)

Keywords: gallium nitride, recovery, chlorination, ammonium chloride

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