
Materials Transactions, Vol.53 No.02 (2012) pp.453-456
© 2012 The Japan Institute of Metals
Reliability Enhancement of Thick Al–Cu Wire Bonds in IGBT Modules Using Al2Cu Precipitates
Toshiki Kurosu1, Khyoupin Khoo3, Yoshihide Nakamura2, Keisuke Ozaki2, Nobuhiro Ishikawa4 and Jin Onuki3
1Power and Industrial Division, Hitachi Ltd., Hitachi 319-1221, Japan
2Graduate School of Science and Engineering, Ibaraki University, Hitachi 316-8511, Japan
3Department of Materials Science, Faculty of Engineering, Ibaraki University, Hitachi 316-8511, Japan
4The National Institute for Materials Science, Tsukuba 305-0003, Japan
The reliability enhancement of Al wire bonds used in the insulated gate bipolar transistor (IGBT) modules is crucial to raise their reliability at the high operating temperatures of the motor vehicles in which the modules are widely used because cracking can occur in the Al. We investigated the bonding reliability of thick Al–0.5 mass% Cu wires, inside of which very fine Al2Cu phases precipitated in both grain boundaries and the Al matrix. We found the reliability of the aged Al–Cu wire bonds was much better than the reliabilities for Al–Cu wire bonds without aging and conventional Al–Ni wire bonds for temperature change ΔT of 50 K. We also found from thermal cycle test results that Al2Cu precipitates prevented crack propagation due to thermal expansion mismatch between Al wires and Si substrate.
(Received 2011/09/05; Accepted 2011/10/25; Published 2012/01/25)
Keywords: insulated gate bipolar transistor (IGBT) module, electric cars, reliability, thick aluminum wire bonds aluminum–0.5 mass% copper wire, AlCu precipitates
PDF (member)
PDF (organization)
Order Document
Table of Contents
REFERENCES
- Onuki J., Koizumi M. and Suwa M.: IEEE Trans. Adv. Packag. 23 (2000) 108.
- M. Mori, R. Saitou and T. Yatsuo: Proc. 5th ISPSD, (1993) p. 287.
- Onuki J., Chonan Y., Komiyama T., Nihei M., Saitou R., Suwa M. and Morita T.: Jpn. J. Appl. Phys. 40 (2001) 3985.
- Shimizu Y., Tomota Y., Onuki J., Khoo K. P. and Kurosu T.: Jpn. J. Appl. Phys. 48 (2009) 066511.
- Kurosu T., Shimizu Y., Tomota Y. and Onuki J.: Mater. Trans. 52 (2011) 102–107.
- Ciappa M.: Microelectron. Reliab. 42 (2002) 653.
- W. Wu, M. Held, P. Jacob, P. Scacco and A. Birolini: Proc. 7th ISPSD, (1995) p. 330.
- S. Sumi, K. Ohga and K. Shirai: Proc. Int. Symp. Testing Failure Anal., (1989) p. 309.
- Onuki J., Koizumi M. and Echigoya J.: Mater. Trans. JIM 37 (1996) 1324.
- Y. Koubuchi: Doctoral Thesis, Faculty of Engineering, Hokkaido University, (1997).
- R. E. Smallman: Physical Metallurgy, (Butterworth, London, 1962) p. 299.
- The Japan Institute of Metals: Materials Data Book, (Maruzen, Tokyo, 2004) p. 196 [in Japanese].
- M. Hansen: Constitution of Binary Alloys, (McGraw-Hill, New York, 1958) p. 87.
[JIM HOME]
[JOURNAL ARCHIVES]
© 2012 The Japan Institute of Metals
Comments to us :
editjt@jim.or.jp