Materials Transactions, Vol.51 No.09 (2010) pp.1627-1632
© 2010 The Japan Institute of Metals
Resistivity Reduction and Adhesion Increase Induced by Surface and Interface Segregation of Ti Atoms in Cu(Ti) Alloy Films on Glass Substrates
1Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
2Technical Development Group, Materials Research Laboratory, Kobe Steel, Ltd., Kobe 651-2271, Japan
3The Ritsumeikan Trust, Kyoto 604-8520, Japan
Low-resistivity and excellent-adhesion Cu(Ti) alloy films were prepared on glass substrates. Cu(0.3∼4 at%Ti) alloy films were deposited on the substrates, and subsequently annealed in vacuum at 400°C for 3 h. Resistivity of the annealed Cu(Ti) alloy films was significantly reduced to about 2.8 μΩcm. Tensile strength of the Cu(Ti)/glass interface increased to about 60 MPa after annealing. The low resistivity and excellent adhesion resulted from Ti segregation at the film surface and the Cu(Ti)/glass interface. The segregated Ti atoms reacted with atmospheric oxygen at the surface and with oxygen in glass and/or from atmosphere at the interface, and formed a TiO2 layer at the surface and a TiO2 layer with a small amount of Ti2O3 and TiO at the interface. The layers were non-crystalline. Columnar grains in the alloy films were seen to enhance Ti segregation and subsequent Cu grain growth. The Cu grain growth also contributed to low resistivity of Cu(Ti) alloy films.
(Received 2010/4/23; Accepted 2010/5/26; Published 2010/7/7)
Keywords: copper titanium alloy film, titanium segregation, resistivity, adhesion, glass substrate
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