Materials Transactions Online

Materials Transactions, Vol.51 No.08 (2010) pp.1490-1493
© 2010 The Japan Institute of Metals

Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing

Naoto Matsuo1, Nobuya Isoda1, Akira Heya1, Sho Amano2, Shuji Miyamoto2, Takayasu Mochizuki2 and Naoya Kawamoto3

1Department of Materials Science & Chemistry, University of Hyogo, Himeji 671-2201, Japan
2Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, Kamigouri-cho, Hyogo 678-1205, Japan
3Department of Electrical and Electronic Engineering, Yamaguchi University, Ube 755-8611, Japan

The influence of laser plasma soft X-ray (LPX) irradiation on crystallization of a-Si film by infrared (IR) furnace annealing is investigated. The crystallization temperature by LPX irradiation followed by IR annealing is lowered down to 420°C and the grain size increases up to 270 nm. This phenomenon is related with the change in characteristics of a-Si film which is generated by the bond distortion and relaxation during the LPX irradiation. It was found that the LPX-irradiated film is constituted by the two different layers and the refractive index of upper layer was lower than that of under layer. The dangling bond density of a-Si film was also decreased by LPX irradiation to a-Si film. From these results, the crystallization mechanism is discussed.

(Received 2010/4/28; Accepted 2010/5/31; Published 2010/7/14)

Keywords: crystallization, a-silicon, laser plasma soft X-ray, infrared furnace annealing, bond relaxation

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