Materials Transactions Online

Materials Transactions, Vol.51 No.02 (2010) pp.237-242
© 2010 The Japan Institute of Metals

Profiling N-Type Dopants in Silicon

Miloš Hovorka1, Filip Mika1, Petr Mikulík2 and Luděk Frank1

1Institute of Scientific Instruments of the ASCR, v.v.i., Kralovopolska 147, CZ-612 64 Brno, Czech Republic
2Faculty of Science, Masaryk University, Kotlarska 2, CZ-611 37 Brno, Czech Republic

Variously doped n-type structures (dopant concentration between 1.5*1016 cm-3 and 1.5*1019 cm-3) on a lightly doped p-type silicon substrate (doped to 1.9*1015 cm-3) have been examined by a photoemission electron microscope equipped with a high-pass energy filter and by an ultra-high vacuum scanning low energy electron microscope. High contrast have been observed between the n-type areas and the p-type substrate and its monotone dependency on the doping level of structures has been manifested. The relation between the energy spectra of photoelectrons and the doping level has been studied, too. The scanning electron microscope images obtained with the landing energy of the primary beam in the low keV range exhibit contrasts similar to those appearing in the full threshold photoemission micrographs.

(Received 2009/7/27; Accepted 2009/10/28; Published 2009/12/9)

Keywords: silicon, dopant contrast, photoemission electron microscopy, scanning electron microscopy

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