Materials Transactions Online

Materials Transactions, Vol.49 No.09 (2008) pp.1953-1956
© 2008 The Japan Institute of Metals

Three-Dimensional Observation of Dislocations by Electron Tomography in a Silicon Crystal

Masaki Tanaka1, Masaki Honda1, Masatoshi Mitsuhara2, Satoshi Hata2, Kenji Kaneko1,3 and Kenji Higashida1

1Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395, Japan
2Department of Engineering Sciences for Electronics and Materials, Kyushu University, Kasuga 816-8580, Japan
3JST-CREST, Fukuoka 819-0395, Japan

Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

(Received 2008/4/23; Accepted 2008/6/13; Published 2008/8/25)

Keywords: mechanical property, scanning transmission electron microscopy (STEM), annular dark field (ADF)

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