Materials Transactions Online

Materials Transactions, Vol.46 No.10 (2005) pp.2295-2297
© 2005 The Japan Institute of Metals

Surface Evolution during Focused Ion Beam Micro-Machining in (001) Plane of Single-Crystalline Ni and Amorphous Nickel Alloy

Hiroyuki Hosokawa1, Takeshi Nakajima1, Koji Shimojima1 and Mamoru Mabuchi2

1Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
2Department of Energy Science and Technology, Kyoto University, Kyoto 606-8501, Japan

A focused Ga+ ion beam (30 keV and 187 pA) have been irradiated at doses of 8.92 × 1016--2.68 × 1018 ions/cm2 in (001) plane of a single-crystalline Ni and an amorphous Ni75B15Si10 alloy and their surface evolution was investigated by atomic force microscopy. The root-mean-square (rms) roughness increased with increasing ion dose and the transition of surface morphology from dot structure to ripple structure occurred during FIB machining in the single-crystalline Ni. However, the amorphous Ni75B15Si10 alloy showed no such transition of surface morphology and held the rms roughness almost constant in an ion dose range more than about 1 × 1017 ions/cm2. Therefore, it is suggested that surface diffusion, which is the primary smoothing mechanism for crystalline surfaces, plays an important role in smoothening during FIB machining when the ion dose is low, while viscous flow, which is dominant for amorphous surfaces, contributes to smoothening when the ion dose is large.

(Received 2005/8/2; Accepted 2005/9/12; Published 2005/10/15)

Keywords: single-crystal, amorphous, focused ion beam, surface morphology

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REFERENCES

  1. Y. Q. Fu, N. K. A. Bryan, O. N. Shing and H. N. P. Wyan: Sens. Actuators 79 (2000) 230--234.
  2. R. Nassar, M. Vasile and W. Zhang: J. Vac. Sci. Technol. B 16 (1998) 109--115.
  3. A. Lugstein, B. Basnar and E. Bertagnolli: J. Vac. Sci. Technol. B 20 (2002) 2238--2242.
  4. Y. Ando and J. Ino: Wear 216 (1998) 115--122.
  5. P. Sigmund: Phys. Rev. 184 (1969) 383--416.
  6. H. Hosokawa, K. Shimojima, Y. Chino, Y. Yamada, C. E. Wen and M. Mabuchi: Mater. Sci. Eng. A 344 (2002) 365--367.
  7. H. Hosokawa, K. Shimojima and M. Mabuchi: Philos. Mag. Lett. 84 (2004) 149--155.
  8. N. S. Ong, Y. H. Koh and Y. Q. Fu: Microelectron. Eng. 60 (2002) 365--379.
  9. H. Hosokawa, K. Shimojima, Y. Chino, Y. Yamada, C. E. Wen and M. Mabuchi: J. Mater. Sci. Lett. 21 (2002) 837--839.
  10. R. M. Bradley and J. M. E. Harper: J. Vac. Sci. Technol. A 6 (1988) 2390--2395.
  11. E. Chason, T. M. Mayer, B. K. Kellerman, D. T. McIlroy and A. J. Howard: Phys. Rev. Lett. 72 (1994) 3040--3043.
  12. C. Herring: J. Appl. Phys. 21 (1950) 301--303.
  13. W. W. Mullins: J. Appl. Phys. 30 (1959) 77--83.


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