
Materials Transactions, Vol.46 No.09 (2005) pp.2114-2116
© 2005 The Japan Institute of Metals
High Speed Deposition of Y2O3 Films by Laser-Assisted Chemical Vapor Deposition
Ryan Banal, Teiichi Kimura and Takashi Goto
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Thick yttria (Y2O3) films were synthesized at high speeds by laser-assisted chemical vapor deposition (LCVD) using an Y(dpm)3 (dpm = dipivaloylmethanate) precursor. The effects of deposition conditions on the deposition rate and their microstructure were investigated. While the deposition rate was less than a few microns per hour at low laser powers (PL) less than 100 W, significantly high deposition rates of more than 200 μm/h (56 nm/s) were obtained at PL more than 160 W. The highest deposition rate in this study was 300 μm/h (83 nm/s) being 100 to 1000 times greater than those of conventional CVD processes. Deposited films were dense and isotropic with no preferred orientation showing cauliflower-like microstructure.
(Received 2005/5/17; Accepted 2005/8/9; Published 2005/9/15)
Keywords: laser chemical vapor deposition, deposition rate, Y2O3 film, Y(dpm)3, cauliflower-like microstructure
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