Materials Transactions Online

Materials Transactions, Vol.46 No.08 (2005) pp.1908-1910
© 2005 The Japan Institute of Metals

Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE

Masahiro Tahashi, Shinsuke Ito, Toshiyuki Ido and Hideo Goto

Department of Electrical Engineering, Chubu University, Kasugai 487-8501, Japan

Vanadium-doped ZnSe, which is theoretically predicted to induce ferromagnetism above room temperature without carrier doping, was epitaxially grown on (100)GaAs substrate by metal-organic vapor phase epitaxial method in an atmospheric pressure. Vanadium concentration in the film obtained under the condition where the substrate and the vanadocene temperatures are 500 and 140°C, respectively, was 6.0 at% at maximum. The full width at half maximum (FWHM) of the peak diffracted from ZnSe(400) face increased with the increase of a vanadium concentration.

(Received 2005/4/18; Accepted 2005/6/3; Published 2005/8/15)

Keywords: metal-organic vapor phase epitaxy, vanadium doping, zinc selenide

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