Materials Transactions Online

Materials Transactions, Vol.46 No.08 (2005) pp.1908-1910
© 2005 The Japan Institute of Metals

Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE

Masahiro Tahashi, Shinsuke Ito, Toshiyuki Ido and Hideo Goto

Department of Electrical Engineering, Chubu University, Kasugai 487-8501, Japan

Vanadium-doped ZnSe, which is theoretically predicted to induce ferromagnetism above room temperature without carrier doping, was epitaxially grown on (100)GaAs substrate by metal-organic vapor phase epitaxial method in an atmospheric pressure. Vanadium concentration in the film obtained under the condition where the substrate and the vanadocene temperatures are 500 and 140°C, respectively, was 6.0 at% at maximum. The full width at half maximum (FWHM) of the peak diffracted from ZnSe(400) face increased with the increase of a vanadium concentration.

(Received 2005/4/18; Accepted 2005/6/3; Published 2005/8/15)

Keywords: metal-organic vapor phase epitaxy, vanadium doping, zinc selenide

PDF(Free)PDF (Free) Table of ContentsTable of Contents


  1. S. Cho, S. Choi, S. C. Hong, Y. Kim, Y. C. Ketterson, B. J. Kim, Y. C. Kim and J. H. Jung: Phys. Rev. B 66 (2002) 033303.
  2. H. Saito, V. Zayets, S. Yamagata and K. Ando: Phys. Rev. Lett. 90 (2003) 207202.
  3. H. Saeki, H. Tanabe and T. Kawai: Solid State Commun. 120 (2001) 439.
  4. H. J. Lee, S. Y. Jeong, C. R. Cho and C. H. Park: Appl. Phys. Lett. 81 (2002) 4020.
  5. G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim and F. Ren: Appl. Phys. Lett. 80 (2002) 3964.
  6. S. E. Park, H.-J. Lee, Y. C. Cho, S.-Y. Jeong, C. R. Cho and S. Cho: Appl. Phys. Lett. 80 (2002) 4187.
  7. S. Y. Wu, H. X. Liu, L. Gu, R. K. Singh, L. Budd, M. van Schilfgaarde, M. R. McCartney, D. J. Smith and N. Newman: Appl. Phys. Lett. 82 (2002) 3047.
  8. K. Sato and H. Katayama-Yoshida: Jpn. J. Appl. Phys. 40 (2001) 651.


© 2002 The Japan Institute of Metals
Comments to us :