Materials Transactions Online

Materials Transactions, Vol.45 No.01 (2004) pp.2-4
© 2004 The Japan Institute of Metals

Effect of Bonding Character on Electron-Irradiation-Induced Chemical Disordering and Amorphization in III-V Compounds

Hidehiro Yasuda1 and Hirotaro Mori2

1Department of Mechanical Engineering, Kobe University, Kobe 657-8501, Japan
2Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Suita 565-0871, Japan

Single crystals of GaSb, GaAs and InAs were irradiated with 2 MeV electrons in the [001] direction in an ultrahigh voltage electron microscope. When electron irradiations were carried out in the semiconductor compounds kept at low temperatures, chemical disordering is first induced and with continued irradiation amorphization sets in. The chemical disordering and the resulting amorphization become more difficult to occur in the sequence of the increasing ionisity (GaSb → GaAs → InAs) at a fixed low temperature.

(Received 2003/7/8; Accepted 2003/8/4)

Keywords: electron-irradiation-induced phase transition, chemical disordering, amorphization, ultra-high voltage electron microscopy, III-V compound

PDF(Free)PDF (Free) Table of ContentsTable of Contents

REFERENCES

  1. T. Mukai, C. Kinoshita and S. Kitajima: Philos. Mag. A 47 (1983) 255-271.
  2. D. E. Luzzi, H. Mori, H. Fujita and M. Meshii: Acta Metall. 34 (1986) 629-639.
  3. H. Yasuda, H. Mori, T. Sakata, M. Naka and H. Fujita: Philos. Mag. B 65 (1992) 1001-1009.
  4. H. Mori: J. Electron Microsc. 42 (1993) 361-370.
  5. C. Kinoshita, Y. Tomokiyo and K. Nakai: Ultramicroscopy 56 (1994) 216-224.
  6. H. Yasuda and H. Mori: J. Microscopy 180 (1995) 80-86.
  7. L. E. Rehn, P. R. Okamoto, J. Pearson, R. Bhadra and M. Grimsditch: Phys. Rev. Lett. 59 (1987) 2987-2990.
  8. N. Q. Lam, P. R. Okamoto and M. Li: J Nucl. Mater. 251 (1997) 89-97.
  9. S. Watanabe, M. Hoshino, T. Koike, T. Suda, S. Ohnuki, H. Takahashi and N. Q. Lam: Philos. Mag. A 83 (2003) 2599-2619.
  10. H. Mori and H. Fujita: Ordering and Disordering in Alloys, (Elsevier, Amsterdam, 1992) pp.~277-286.
  11. H. Inui, H. Mori and H. Fujita: Acta Metall. 37 (1989) 1337-1342.
  12. J. C. Phillips: Bonds and Bands in Semiconductors, (Academic Press, NY, 1973) pp.~58-69.
  13. M. Hirata, S. Takeda, M. Hirata and M. Kiritani: Proc. 13th Int. Conf. Defects in Semiconductors, Colorado, California, (1984) 359-366.
  14. J. H. Neethling: Physica B 170 (1991) 285-291.
  15. J. H. Neethling: Proc. 13th Inter. Cong. on Electron Microscopy, Paris, (1994) 101-102.
  16. M. Borm and K. Huang: Dynamical Theory of Crystal Lattice, (Oxford University Press, 1954) pp.~89-100.
  17. R. M. Martin: Phys. Rev. B 1 (1970) 4005-4011.
  18. J. Dabrowski and M. Scheffler: Phys. Rev. B 40 (1989) 10391-10401.

[JIM HOME] [JOURNAL ARCHIVES]

© 2002 The Japan Institute of Metals
Comments to us : editjt@jim.or.jp